Flame Temperature Effect on the Structure of SiC Nanoparticles Grown by Laser Pyrolysis

Small SiC nanoparticles (10 nm diameter) have been grown in a flow reactor by CO₂ laser pyrolysis from a C₂H₂ and SiH₄ mixture. The laser radiation is strongly absorbed by SiH₄ vibration. The energy is transferred to the reactive medium and leads to the dissociation of molecules and the subsequent growth of the nanoparticles. The reaction happens with a flame. The purpose of the experiments reported in this paper is to limit the size of the growing particles to the nanometric scale for which specific properties are expected to appear. Therefore the effects of experimental parameters on the structure and chemical composition of nanoparticles have been investigated. For a given reactive mixture and gas velocity, the flame temperature is governed by the laser power. In this study, the temperature was varied from 875°C to 1100°C. The chemical analysis of the products indicate that their composition is a function of the temperature. For the same C/Si atomic ratio in the gaseous phase, the C/Si ratio in the powder increases from 0.7 at 875°C up to 1.02 at 1100°C, indicating a growth mechanism limited by C₂H₂ dissociation. As expected, X-ray diffraction has shown an improved crystallisation with increasing temperature. Transmission electron microscopy observations have revealed the formation of 10 nm grains for all values of laser power (or flame temperature). These grains appear amorphous at low temperature, whereas they contain an increasing number of nanocrystals (2 nm diameter) when the temperature increases. These results pave the way to a better control of the structure and chemical composition of laser synthesised SiC nanoparticles in the 10 nm range.     

Strong visible PL from the nc-Si thin film by Ni silicide mediated crystallization

We studied the growth of nanocrystalline silicon (nc-Si) thin film exhibiting a strong room temperature photoluminescence (PL) at 1.81–2.003 eV. The amorphous silicon was crystallized by Ni silicide mediated crystallization (Ni SMC) and then Secco-etched to exhibit the PL. The PL peak energy and intensity increase with increasing the metal density on the a-Si because of the reduction in the grain size down to 2 nm. The photoluminescence energy and peak intensity depend strongly on the Secco etch time because the grain size is reduced by etching the grain boundaries.     

Self-organized amorphous material in silicon (0 0 1) by focused ion beam (FIB) system

A method using a focused ion beam (FIB) to prepare a silicon amorphous material is presented. The method involves the redeposition of sputtered material generated during the interaction of the Ga⁺ ion beam with a silicon substrate material. The shape and dimensions of this amorphous material are self-organized and reproducible. The stability of this amorphous material under electron irradiation was investigated in the transmission electron microscopy (TEM). Electron irradiation can induce recrystallization of the amorphous material, resulting in the lateral and vertical growth, starting at an amorphous-crystalline interface, of polysilicon containing defects.     

Hydroxyapatite coating on porous silicon substrate obtained by precipitation process

Hydroxyapatite Ca₁₀(PO₄)₆(OH)₂ (HAP) is known as a bioactive and biocompatible material, HAP coatings were used to improve the biocompatible of substrate by many researcher, In this work, HAP thin films on porous silicon (PS) substrates have been prepared by aqueous precipitation method with rapid thermal annealing (RTA) processes. The HAP films had been prepared under the annealing temperature ranging from 300 to 1000 °C. By the measurement of X-ray diffraction (XRD), it was found that for the crystallinity optimization, the heat-treatment at 850–950 °C for 1 h would be favorable. Atomic force microscopy (AFM) and scanning electron microscope (SEM) measurements reveal a dense and smooth surface of the HAP film, and tightly adherence of the coating on porous silicon substrate after sintered. Thus, by this method, porous silicon could be increased its bioactivity and so that could be used in the biomedical area.     

The effect of oxidation on physical properties of porous silicon layers for optical applications

In order to understand the optical loss mechanisms in porous silicon based waveguides, structural and optical studies have been performed. Scanning and transmission electron microscopic observations of porous silicon layers are obtained before and after an oxidation process at high temperature in wet O₂. Pore size and shape of heavily p-type doped Si wafers are estimated and correlated to the optical properties of the material before and after oxidation. The refractive index was measured and compared to that determined by the Bruggeman model.     

Influence of temperature-pressure treatment on heavily hydrogenated silicon surface

Microstructure and related properties of hydrogenated silicon samples, Si:H, treated at high-temperature (HT) up to 1270 K under hydrostatic argon pressure (HP) up to 1.1 GPa are investigated. To prepare Si:H, Czochralski grown 0 0 1 oriented single crystalline Si wafer with 50 nm thick surface SiO₂ layer was heavily implanted with hydrogen using the immersion plasma source of hydrogen ions with energy 24 keV.The surface of HT-HP treated Si:H was characterised by scanning electron microscopy. Reflectivity pattern measurements in the wavelength range of 350-2000 nm have been performed to analyse their surface and bulk properties. The volume averaging method for a model of layer-like structure has been used to simulate the HT-HP treated Si:H. The analysis of Si:H samples suggests the multi-layer structure composed of Si, Si:H, SiO, SiO₂, and of porous Si layers in the sub-surface region. The porous Si:H samples model is in good consistency with experimental data from reflectance measurements.     

应力对La0.83Sr0.17MnO3薄膜输运性能的影响

采用溶胶-凝胶方法在Si(111)上制备了LSMO(x=0.17)薄膜.研究了块体材料和不同厚度薄膜R -T曲线、红外光谱和X射线衍射.结果表明，LSMO薄膜属于正交晶体结构，薄膜取向与膜厚度 有关，当膜厚度为450nm或680nm时，主要取向〈200〉，而膜厚度为900nm时取向为〈020〉 ：根据离子对相互作用能和谐振子模型，得到了红外吸收与Mn—O—Mn键长和键角关系式，6 00cm^-1附近红外吸收与晶格常数b的变化有关；块体与薄膜的金属—绝缘体转变 温度(T_MI)存在较大差别，薄膜转变温度显著低于块体，并与厚度有一定关系. 认为是LSMO薄膜中的应力诱导了晶格常数变化，引起键角改变及JT效应是转变温度变化的主 要原因. 关键词： 单晶硅 晶格常数 金属—绝缘体转变温度 应力诱导     

锂离子电池硅基负极材料的研究进展

硅基材料是新一代高容量锂离子蓄电池负极材料的典型代表,近年来已成为理论研究和应用研究的热点.本文介绍了锂离子电池硅基负极材料的制备方法、电化学性能及其研究现状,分析了硅材料作为锂离子电池负极材料存在的问题;讨论了硅材料作为锂离子电池负极材料的研究前景.并指出若能克服目前存在问题,将有望成为新一代锂离子电池负极材料.     

On the origin of 1.5 μm luminescence in porous silicon coated with sol–gel derived erbium-doped Fe2O3 films

Sol–gel derived Fe₂O₃ films containing about 10 wt% of Er₂O₃ were deposited on porous silicon by dipping or by a spin-on technique followed by thermal processing at 1073 K for 15 min. The samples were characterized by means of PL, SEM and X-ray diffraction analyses. They exhibit strong room-temperature luminescence at 1.5 μm related to erbium in the sol–gel derived host. The luminescence intensity increases by a factor of 1000 when the samples are cooled from 300 to 4.2 K. After complete removal of the erbium-doped film by etching and partial etching the porous silicon, the erbium-related luminescence disappears. Following this, luminescence at 1.5 μm originating from optically active dislocations (“D-lines”) in porous silicon was detected. The influence of the conditions of synthesis on luminescence at 1.5 μm is discussed.